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| NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P07D03LV SOP-8 PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 20m ID 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) 1 1 SYMBOL VDS VGS LIMITS 30 20 7 6 40 2 1.3 -55 to 150 275 UNITS V V TC = 25 C TC = 70 C TC = 25 C TC = 70 C ID IDM PD Tj, Tstg TL A W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA TYPICAL MAXIMUM 62.5 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 C VDS = 5V, VGS = 10V 25 30 0.7 1 1.4 V LIMITS UNIT MIN TYP MAX 100 nA 1 10 A A 1 OCT-14-2002 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor VGS = 2.5V, ID = 5A RDS(ON) VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A VDS = 15V, ID = 5A DYNAMIC P07D03LV SOP-8 Drain-Source On-State Resistance1 40 23 18 16 48 30 25 S m Forward Transconductance 1 gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time2 Turn-Off Delay Time Fall Time2 2 2 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15V ID 1A, VGS = 10V, RGEN = 6 VDS = 0.5V(BR)DSS, VGS = 5V, ID = 7A VGS = 0V, VDS = 15V, f = 1MHz 830 185 80 9 2.8 3.1 5.7 10 18 5 nS 13 nC pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge 1 2 IS ISM VSD trr Qrr IF = 1A, VGS = 0V IF = 5A, dlF/dt = 100A / S 15.5 7.9 3 6 1 A V nS nC Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P07D03LV", DATE CODE or LOT # 2 OCT-14-2002 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P07D03LV SOP-8 TYPICAL PERFORMANCE CHARACTERISTICS 3 OCT-14-2002 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P07D03LV SOP-8 4 OCT-14-2002 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P07D03LV SOP-8 SOIC-8 (D) MECHANICAL DATA mm Min. 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 mm Min. 0.5 0.18 Typ. 0.715 0.254 0.22 0 4 8 Max. 0.83 0.25 Dimension A B C D E F G Dimension H I J K L M N 5 OCT-14-2002 |
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